 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENN7287 2SC5832 NPN Epitaxial Planar Silicon Transistor 2SC5832 Driver Applications Applications * Package Dimensions unit : mm 2045B [2SC5832] 1.5 Suitable for use in switching of inductive load (motor drivers, printer hammer drivers, relay drivers). Features * * * * * High DC current gain. Wide ASO. On-chip zener diode of 6510V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 2 3 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SC5832] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.8 0.5 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 13003 TS IM TA-3670 No.7287-1/4 2SC5832 Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions On-chip zener diode(6510V) On-chip zener diode(6510V) Ratings 55 55 6 2 4 1.0 10 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Inductive Load Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Es / b VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO ton tstg tf VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=1A L=100mH, RBE=100 IC=1A, IB=4mA IC=1A, IB=4mA IC=100A, IE=0 IC=1mA, RBE= See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 55 55 25 1.0 65 65 0.2 3.5 0.5 1.5 2.0 75 75 1000 4000 180 MHz mJ V V V V s s s Conditions Ratings min typ max 10 2 Unit A mA Switching Time Test Circuit PW=50s, Duty Cycle1% IB1= --IB2=4mA TUT INPUT RB VR 50 + 100F VBB= --5V IC=250A, IB1= --250A, IB2=1A + 470F VCC=20V RL 20 OUTPUT Es / b Test Circuit VCC=20V, RBE=100 L TUT SW +VCC IB RBE 10k 300 2.0 IC -- VCE 20 1 0 50 2.4 IC -- VBE VCE=5V 00 A A A 1000 Collector Current, IC -- A 1.2 0C 50 0.8 0A 450 0 A 40 A3 Collector Current, IC -- A 1.6 300 50A A 2.0 1.6 250A 1.2 0.8 150A 0.4 0.4 0 0 1 2 3 IB=0 4 5 ITR06005 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Ta=1 2 --40C 200A 25C ITR06006 No.7287-2/4 2SC5832 3 2 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 5 7 0.1 2 3 5 7 1.0 2 3 5 hFE -- IC VCE=5V C 20 C 25 1000 7 Cob -- VCB f=1MHz Output Capacitance, Cob -- pF 5 3 2 DC Current Gain, hFE = Ta 1 100 7 5 3 2 -- C 40 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- A 10 7 ITR06007 10 7 Collector-to-Base Voltage, VCB -- V ITR06008 VCE(sat) -- IC VBE(sat) -- IC IC / IB=250 IC / IB=250 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 3 2 3 2 Ta= --40C 25C 1.0 7 5 3 0.1 25C 0C Ta= --4 1.0 7 5 3 0.1 120C 120C 2 3 5 7 1.0 2 3 5 IT04364 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 10 7 5 IC -- L Collector Current, IC -- A 7 5 3 2 ITR06010 ASO RBE=100 Tc=25C Collector Current, IC -- A ICP=4A IC=2A 10s 10 s 0 ms 1 Collector Current, IC -- A 3 2 25m J 1.0 7 5 3 2 0.1 7 5 3 Ta = 25 C , 10 ms Tc DC =25 op C era tio n DC op era 1.0 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 3 tio n 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 L -- mH 1.4 ITR06011 12 PC -- Ta Collector-to-Emitter Voltage, VCE -- V IT04365 PC -- Tc 1.2 Collector Dissipation, PC -- W 1.0 Collector Dissipation, PC -- W 100 120 140 160 10 8 0.8 No 0.6 he 6 at sin k 4 0.4 0.2 0 0 20 40 60 80 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT04366 Case Temperature, Tc -- C IT05327 No.7287-3/4 2SC5832 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2003. Specifications and information herein are subject to change without notice. PS No.7287-4/4 |
Price & Availability of 2SC5832
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |